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參數(shù)資料
| 型號(hào)： | 933930220115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率) |
| 英文描述： | 0.2 A, 100 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 58K |
| 代理商： | 933930220115 |
2002 Jan 23
2
Philips Semiconductors
Product specication
High-speed diodes
PMLL4148L; PMLL4448
FEATURES
Small hermetically sealed glass
SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 100 V
Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
High-speed switching
Fast logic applications.
DESCRIPTION
The PMLL4148L and PMLL4448 are high-speed switching diodes fabricated in
planar technology, and encapsulated in small hermetically sealed glass
SOD80C SMD packages. PMLL4148L was formerly named PMLL4148 and
has no difference to this type in technical specification, processing, packing or
labelling.
Fig.1 Simplified outline (SOD80C) and symbol.
The marking band indicates the cathode.
handbook, 4 columns
MAM061
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
100
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
see Fig.2; note 1
200
mA
IFRM
repetitive peak forward current
450
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
s
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
500
mW
Tstg
storage temperature
65
+200
°C
Tj
junction temperature
200
°C
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