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參數(shù)資料
| 型號： | 933929740215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 36K |
| 代理商： | 933929740215 |
April 1995
2
Philips Semiconductors
Product specication
N-channel junction FETs
PMBFJ111;
PMBFJ112; PMBFJ113
FEATURES
High-speed switching
Interchangeability of drain and
source connections
Low RDSon at zero gate voltage
(
< 30 for PMBFJ111).
DESCRIPTION
Symmetrical N-channel junction
FETs in a surface mount SOT23
envelope. Intended for use in
applications such as analog switches,
choppers, commutators, multiplexers
and thin and thick film hybrids.
PINNING - SOT23
Note
1. Drain and source are
interchangeable.
PIN
DESCRIPTION
1
drain
2
source
3
gate
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
±40
V
VGSO
gate-source voltage
40
V
VGDO
drain-drain voltage
40
V
IG
forward gate current
(DC)
50
mA
Ptot
total power dissipation
Tamb =25 °C;
note 1
300
mW
Tstg
storage temperature
65
150
°C
Tj
operating junction
temperature
150
°C
Fig.1 Simplified outline and symbol.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
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