參數(shù)資料
型號(hào)： 933919920115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SC-73, 4 PIN
文件頁(yè)數(shù)： 7/14頁(yè)
文件大小： 117K
代理商： 933919920115
September 1995
2
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFG97
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope.
It features excellent output voltage
capabilities, and is primarily intended
for use in MATV applications.
PNP complement is the BFG31.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
age
4
123
MSB002 - 1
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
IC
DC collector current
100
mA
Ptot
total power dissipation
up to Ts = 125 °C (note 1)
1W
hFE
DC current gain
IC = 70 mA; VCE = 10 V; Tj =25 °C25
80
fT
transition frequency
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb =25 °C
5.5
GHz
GUM
maximum unilateral power gain
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb =25 °C
16
dB
IC = 70 mA; VCE = 10 V;
f = 800 MHz; Tamb =25 °C
12
dB
Vo
output voltage
IC = 70 mA; VCE = 10 V;
dim = 60 dB; RL =75 ;
f(p+qr) = 793.25 MHz; Tamb =25 °C
700
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
3V
IC
DC collector current
100
mA
Ptot
total power dissipation
up to Ts = 125 °C (note 1)
1W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
相關(guān)PDF資料
PDF描述
933919920135 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
933919930115 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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05631062 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
933919940115 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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