參數(shù)資料
型號(hào)： 933913910135
廠商： NXP SEMICONDUCTORS
元件分類： 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述： 0.2 A, 100 V, SILICON, SIGNAL DIODE
封裝： HERMETIC SEALED, GLASS, SMD, 2 PIN
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 58K
代理商： 933913910135
2002 Jan 23
2
Philips Semiconductors
Product specication
High-speed diode
BAS32L
FEATURES
Small hermetically sealed glass
SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 100 V
Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
High-speed switching
Fast logic applications.
DESCRIPTION
The BAS32L is a high-speed switching diode fabricated in planar technology,
and encapsulated in the small hermetically sealed glass SOD80C SMD
package.
Fig.1 Simplified outline (SOD80C) and symbol.
The marking band indicates the cathode.
handbook, 4 columns
MAM061
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
100
V
VR
continuous reverse voltage
75
V
IF
continuous forward current
see Fig.2; note 1
200
mA
IFRM
repetitive peak forward current
450
mA
IFSM
non-repetitive peak forward current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
s
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
500
mW
Tstg
storage temperature
65
+200
°C
Tj
junction temperature
200
°C
相關(guān)PDF資料
PDF描述
933934830215 5.1 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
933934840235 5.6 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
933934880215 7.5 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
933934920235 10 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
933934970215 15 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB
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