參數(shù)資料
型號(hào): 933913910115
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 0.2 A, 100 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, SMD, 2 PIN
文件頁數(shù): 6/12頁
文件大小: 58K
代理商: 933913910115
2002 Jan 23
3
Philips Semiconductors
Product specication
High-speed diode
BAS32L
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
see Fig.3
IF = 5 mA
620
750
mV
IF = 100 mA
1000
mV
IF = 100 mA; Tj = 100 °C
930
mV
IR
reverse current
see Fig.5
VR =20V
25
nA
VR =75V
5
A
VR =20V; Tj = 150 °C
50
A
VR =75V; Tj = 150 °C
100
A
V(BR)R
reverse breakdown voltage
IR = 100 A
100
V
Cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
2
pF
trr
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 ; measured
at IR = 1 mA; see Fig.7
4ns
Vfr
forward recovery voltage
when switched from IF = 50 mA;
tr = 20 ns; see Fig.8
2.5
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
300
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
350
K/W
相關(guān)PDF資料
PDF描述
933913910135 0.2 A, 100 V, SILICON, SIGNAL DIODE
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