參數(shù)資料
型號: 933908920215
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: PLASTIC, SMD, SST3, 3 PIN
文件頁數(shù): 3/6頁
文件大小: 34K
代理商: 933908920215
April 1995
3
Philips Semiconductors
Product specication
P-channel silicon eld-effect transistors
PMBFJ174 to 177
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specied
Note
1. Mounted on a ceramic substrate of 8 mm
× 10 mm × 0,7 mm.
Drain-source voltage
± VDS
max.
30
V
Gate-source voltage
VGSO
max.
30
V
Gate-drain voltage
VGDO
max.
30
V
Gate current (d.c.)
I
G
max.
50
mA
Total power dissipation
up to Tamb =25 °C(1)
Ptot
max.
300
mW
Storage temperature range
Tstg
65 to + 150
°C
Junction temperature
Tj
max.
150
°C
From junction to ambient in free air
Rth j-a
=
430
K/W
PMBFJ174
175
176
177
Gate cut-off current
VGS = 20 V; VDS =0
IGSS
<
11
1
1 nA
Drain cut-off current
VDS = 15 V; VGS = 10 V
IDSX
<
11
1
1 nA
Drain current
>
<
20
135
7
70
2
35
1,5
20
mA
VDS = 15 V; VGS =0
IDSS
Gate-source breakdown voltage
IG =1 A; VDS =0
V(BR)GSS
>
30
30 V
Gate-source cut-off voltage
>
<
5
10
3
6
1
4
0,8
2,25
V
ID = 10 nA; VDS = 15 V
VGS off
Drain-source ON-resistance
V
DS = 0,1 V; VGS =0
RDS on
<
85
125
250
300
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