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參數(shù)資料
| 型號： | 933897220115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, UPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 933897220115 |
September 1995
2
Philips Semiconductors
Product specication
PNP 5 GHz wideband transistor
BFQ149
DESCRIPTION
PNP transistor in a SOT89 envelope.
It is intended for use in
UHF applications such as broadband
aerial amplifiers (30 to 860 MHz) and
in microwave amplifiers such as radar
systems, spectrum analyzers, etc.,
using SMD technology.
PINNING
PIN
DESCRIPTION
Code: FG
1
emitter
2
collector
3
base
Fig.1 SOT89.
fpage
12
3
Bottom view
MBK514
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
15
V
IC
DC collector current
100
mA
Ptot
total power dissipation
up to Ts = 135 °C (note 1)
1W
hFE
DC current gain
IC = 70 mA; VCE = 10 V; Tj = 25 °C20
50
fT
transition frequency
IC = 75 mA; VCE = 10 V;
f = 500 MHz; Tj = 25 °C
45
GHz
GUM
maximum unilateral power gain
IC = 50 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
12
dB
F
noise gure
IC = 50 mA; VCE = 10 V;
Rs =60 ; f = 500 MHz;
Tamb = 25 °C
3.75
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
3V
IC
DC collector current
100
mA
ICM
peak collector current
f
> 1 MHz
150
mA
Ptot
total power dissipation
up to Ts = 135 °C (note 1)
1W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
150
°C
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