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參數(shù)資料
| 型號(hào)： | 933890550115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, UPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 45K |
| 代理商： | 933890550115 |
1999 Apr 14
3
Philips Semiconductors
Product specication
PNP switching transistor
PXT4403
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
97
K/W
Rth j-s
thermal resistance from junction to soldering point
17
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 40 V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 5V
50
nA
hFE
DC current gain
IC = 0.1 mA; VCE = 1V
30
IC = 1 mA; VCE = 1V
60
IC = 10 mA; VCE = 1 V
100
IC = 150 mA; VCE = 2 V
100
300
IC = 500 mA; VCE = 2V
20
VCEsat
collector-emitter saturation
voltage
IC = 150 mA; IB = 15 mA
400
mV
IC = 500 mA; IB = 50 mA
750
mV
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA
950
mV
IC = 500 mA; IB = 50 mA
1.3
V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
8.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
35
pF
fT
transition frequency
IC = 20 mA; VCE = 10 V; f = 100 MHz
200
MHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
ICon = 150 mA; IBon = 15 mA;
IBoff =15mA
40
ns
td
delay time
15
ns
tr
rise time
30
ns
toff
turn-off time
350
ns
ts
storage time
300
ns
tf
fall time
50
ns
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