參數(shù)資料
型號(hào)： 933856870185
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述： 0.215 A, 85 V, SILICON, SIGNAL DIODE
封裝： PLASTIC, SMD, 3 PIN
文件頁(yè)數(shù)： 7/14頁(yè)
文件大小： 107K
代理商： 933856870185
1999 May 11
2
Philips Semiconductors
Product specication
High-speed diode
PMBD914
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 70 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA
Reverse recovery time: max. 4 ns.
APPLICATIONS
High-speed switching in thick and
thin-film circuits.
DESCRIPTION
The PMBD914 is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
small SOT23 plastic SMD package.
PINNING
PIN
DESCRIPTION
1
anode
2
not connected
3
cathode
Fig.1 Simplified outline (SOT23) and symbol.
Marking code: p5D = made in Hong Kong; t5D = made in Malaysia.
handbook, halfpage
21
3
MAM185
2
n.c.
1
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
85
V
VR
continuous reverse voltage
70
V
IF
continuous forward current
note 1; see Fig.2
215
mA
IFRM
repetitive peak forward current
500
mA
IFSM
non-repetitive peak forward
current
square wave; Tj =25 °C prior to
surge; see Fig.4
t=1
s
4A
t=1ms
1A
t=1s
0.5
A
Ptot
total power dissipation
Tamb =25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
相關(guān)PDF資料
PDF描述
933856870235 0.215 A, 85 V, SILICON, SIGNAL DIODE
933859210215 0.215 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
933859210185 0.215 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
933859210235 0.215 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
933859220215 0.215 A, 85 V, SILICON, SIGNAL DIODE
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