參數(shù)資料
型號： 933821840215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 300 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SST3, 3 PIN
文件頁數(shù)： 2/8頁
文件大小： 43K
代理商： 933821840215
1999 Apr 15
2
Philips Semiconductors
Product specication
NPN high-voltage transistor
PMBT5551
FEATURES
Low current (max. 300 mA)
High voltage (max. 160 V).
APPLICATIONS
General purpose
Telephony.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complement: PMBT5401.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
PMBT5551
G1
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
180
V
VCEO
collector-emitter voltage
open base
160
V
VEBO
emitter-base voltage
open collector
6V
IC
collector current (DC)
300
mA
ICM
peak collector current
600
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
相關(guān)PDF資料
PDF描述
933821850215 300 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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