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參數(shù)資料
| 型號： | 933792140235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 933792140235 |
1999 Apr 08
2
Philips Semiconductors
Product specication
PNP general purpose double transistor
BCV62
FEATURES
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pair.
APPLICATIONS
For use in applications where the working point must be
independent of temperature
Current mirrors.
DESCRIPTION
PNP double transistor in a SOT143B plastic package.
NPN complement: BCV61.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BCV62
3Mp
BCV62B
3Kp
BCV62A
3Jp
BCV62C
3Lp
PINNING
PIN
DESCRIPTION
1
collector TR2; base TR1 and TR2
2
collector TR1
3
emitter TR1
4
emitter TR2
Fig.1 Simplified outline (SOT143B) and symbol.
handbook, halfpage
4
12
3
MAM292
Top view
21
34
TR1
TR2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage TR1
open emitter
30
V
VCEO
collector-emitter voltage TR1
open base
30
V
VEBS
emitter-base voltage
VCE =0
6V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current TR1
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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