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參數(shù)資料
| 型號(hào)： | 933722330127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 933722330127 |
Philips Semiconductors
Product specification
Rectifier diodes
BYR29 series
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 500 V/ 600 V/ 700 V /
Fast switching
800 V
Soft recovery characteristic
Reverse surge capability
V
F ≤ 1.5 V
High thermal cycling performance
Low thermal resistance
I
F(AV) = 8 A
t
rr ≤ 75 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in high frequency switched mode
1
cathode
power supplies.
2
anode
The BYR29 series is supplied in the
conventional
leaded
SOD59
tab
cathode
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYR29
-500
-600
-700
-800
V
RRM
Peak repetitive reverse voltage
-
500
600
700
800
V
RWM
Crest working reverse voltage
-
500
600
700
800
V
R
Continuous reverse voltage
-
500
600
700
800
V
I
F(AV)
Average forward current
1
square wave;
-
8
A
δ = 0.5;
T
mb ≤ 115 C
I
FRM
Repetitive peak forward current t = 25
s; δ = 0.5;
-
16
A
T
mb ≤ 115 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
60
A
current
t = 8.3 ms
-
66
A
sinusoidal; with
reapplied V
RRM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
2.5
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air.
-
60
-
K/W
ambient
k
a
12
1
tab
2
1 Neglecting switching and reverse current losses
September 1998
1
Rev 1.300
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