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參數(shù)資料
| 型號： | 933662020127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 9 A, 500 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 933662020127 |
Philips Semiconductors
Product specification
Rectifier diodes
BYV29 series
ultrafast
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 300 V/ 400 V/ 500 V
Fast switching
Soft recovery characteristic
V
F ≤ 1.03 V
High thermal cycling performance
Low thermal resistance
I
F(AV) = 9 A
t
rr ≤ 60 ns
GENERAL DESCRIPTION
PINNING
SOD59 (TO220AC)
Ultra-fast, epitaxial rectifier diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in high frequency switched mode
1
cathode
power supplies.
2
anode
The BYV29 series is supplied in the
conventional
leaded
SOD59
tab
cathode
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV29
-300
-400
-500
V
RRM
Peak repetitive reverse voltage
-
300
400
500
V
RWM
Crest working reverse voltage
-
300
400
500
V
R
Continuous reverse voltage
-
300
400
500
V
I
F(AV)
Average forward current
1
square wave;
δ = 0.5;
-
9
A
T
mb ≤ 123 C
I
FRM
Repetitive peak forward current t = 25
s; δ = 0.5;
-
18
A
T
mb ≤ 123 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current.
t = 8.3 ms
-
110
A
sinusoidal; with reapplied
V
RRM(max)
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
2.5
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air.
-
60
-
K/W
ambient
k
a
12
1
tab
2
1 Neglecting switching and reverse current losses.
September 1998
1
Rev 1.300
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