參數(shù)資料
型號： 933615000215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝： MICRO MINIATURE, PLASTIC, SMD, 4 PIN
文件頁數(shù)： 5/12頁
文件大?。?/td> 63K
代理商： 933615000215
1999 Aug 11
2
Philips Semiconductors
Product specication
Silicon N-channel dual gate MOS-FET
BF992
APPLICATIONS
VHF applications such as VHF television tuners and FM
tuners with 12 V supply voltage. The device is also
suitable for use in professional communications
equipment.
DESCRIPTION
Depletion type field-effect transistor in a plastic
micro-miniature SOT143B package with source and
substrate interconnected.
The transistor is protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
PINNING
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PIN
SYMBOL
DESCRIPTION
1
s, b
source
2
d
drain
3g2
gate 2
4g1
gate 1
Fig.1
Simplified outline (SOT143B) and symbol.
Marking code: M92.
handbook, halfpage
s,b
d
g
1
g
2
43
2
1
Top view
MAM039
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VDS
drain-source voltage (DC)
20
V
ID
drain current (DC)
40
mA
Ptot
total power dissipation
Tamb =60 °C
200
mW
Yfs
forward transfer admittance
f = 1 kHz; ID = 15 mA; VDS =10V;
VG2-S =4V
25
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz; ID = 15 mA; VDS =10V;
VG2-S =4V
4
pF
Crs
reverse transfer capacitance
f = 1 MHz; ID = 15 mA; VDS =10V;
VG2-S =4V
30
fF
F
noise gure
GS = 2 mS; ID = 15 mA; VDS =10V;
VG2-S = 4 V; f = 200 MHz
1.2
dB
Tj
operating junction temperature
150
°C
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