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參數(shù)資料
| 型號： | 933551570235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 117K |
| 代理商： | 933551570235 |
1997 Oct 29
2
Philips Semiconductors
Product specication
NPN 6 GHz wideband transistor
BFR93A
FEATURES
High power gain
Low noise figure
Very low intermodulation distortion.
APPLICATIONS
RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT23.
page
MSB003
Top view
12
3
Marking code: R2p.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
15
V
VCEO
collector-emitter voltage
open base
12
V
IC
collector current (DC)
35
mA
Ptot
total power dissipation
Ts ≤ 95 °C
300
mW
Cre
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz
0.6
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
6
GHz
GUM
maximum unilateral power gain IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb =25 °C13
dB
IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb =25 °C7
dB
F
noise gure
IC = 5 mA; VCE = 8 V; f = 1 GHz; Γs = Γopt;
Tamb =25 °C
1.9
dB
VO
output voltage
dim = 60 dB; IC = 30 mA; VCE =8V;
RL =75 ; Tamb =25 °C;
fp +fq fr = 793.25 MHz
425
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
15
V
VCEO
collector-emitter voltage
open base
12
V
VEBO
emitter-base voltage
open collector
2V
IC
collector current (DC)
35
mA
Ptot
total power dissipation
Ts ≤ 95 °C; note 1
300
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
+175
°C
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