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參數(shù)資料
| 型號(hào)： | 933551570215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 117K |
| 代理商： | 933551570215 |
1997 Oct 29
3
Philips Semiconductors
Product specication
NPN 6 GHz wideband transistor
BFR93A
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
.
2. Measured on the same die in a SOT37 package (BFR91A).
3. dim = 60 dB (DIN 45004B); IC = 30 mA; VCE = 8 V; RL =75 ; Tamb =25 °C;
Vp =VO at dim = 60 dB; fp = 795.25 MHz;
Vq =VO 6 dB at fq = 803.25 MHz;
Vr =VO 6 dB at fr = 805.25 MHz;
measured at fp +fq fr = 793.25 MHz.
4. IC = 30 mA; VCE = 8 V; RL =75 ; Tamb =25 °C;
Vp = 200 mV at fp = 250 MHz;
Vq = 200 mV at fq = 560 MHz;
measured at fp +fq = 810 MHz.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
Ts ≤ 95 °C; note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =5V
50
nA
hFE
DC current gain
IC = 30 mA; VCE = 5 V
40
90
Cc
collector capacitance
IE =ie = 0; VCB =5V; f=1MHz
0.7
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
1.9
pF
Cre
feedback capacitance
IC =ic = 0; VCE = 5 V; f = 1 MHz;
Tamb =25 °C
0.6
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
4.5
6
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 30 mA; VCE = 8 V; f = 1 GHz;
Tamb =25 °C
13
dB
IC = 30 mA; VCE = 8 V; f = 2 GHz;
Tamb =25 °C
7
dB
F
noise gure (note 2)
IC = 5 mA; VCE = 8 V; f = 1 GHz;
Γs = Γopt; Tamb =25 °C
1.9
dB
IC = 5 mA; VCE = 8 V; f = 2 GHz;
Γs = Γopt; Tamb =25 °C
3
dB
VO
output voltage
notes 2 and 3
425
mV
d2
second order intermodulation
distortion
notes 2 and 4
50
dB
G
UM
10 log
S
21
2
1
S
11
2
–
1
S
22
2
–
-------------------------------------------------------------- dB
=
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