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參數(shù)資料
| 型號： | 933551560235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 118K |
| 代理商： | 933551560235 |
1997 Oct 29
5
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFR92A
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
IC =ic = 0; f = 1 MHz; Tj =25 °C.
handbook, halfpage
0
5
10
20
1
0
0.8
MBB274
15
0.6
0.4
0.2
Cc
(pF)
VCB (V)
Fig.6
Transition frequency as a function of
collector current; typical values.
VCE = 10 V; f = 500 MHz; Tamb =25 °C.
handbook, halfpage
010
20
30
6
0
2
4
MBB275
I
(mA)
C
f T
(GHz)
Fig.7
Gain as a function of collector current;
typical values.
VCE = 10 V; f = 500 MHz.
MSG = maximum stable gain;
GUM = maximum unilateral power gain.
handbook, halfpage
0
30
20
10
0
25
MBB278
510
15
20
gain
(dB)
IC (mA)
MSG
GUM
Fig.8
Gain as a function of collector current;
typical values.
VCE = 10 V; f = 1 GHz.
MSG = maximum stable gain;
GUM = maximum unilateral power gain.
handbook, halfpage
0
30
20
10
0
25
MBB279
510
15
20
gain
(dB)
I
(mA)
C
MSG
GUM
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