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參數(shù)資料
| 型號： | 933545610215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SMD, SST, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 933545610215 |
2000 Apr 11
3
Philips Semiconductors
Product specication
NPN switching transistor
MMBT2222A
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =60V
10
nA
IE = 0; VCB =60V; Tj = 125 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
10
nA
hFE
DC current gain
IC = 0.1 mA; VCE =10V
35
IC = 1 mA; VCE =10V
50
IC = 10 mA; VCE =10V
75
IC = 10 mA; VCE =10V;
Tamb = 55 °C
35
IC = 150 mA; VCE = 10 V
100
300
IC = 150 mA; VCE =1V
50
IC = 500 mA; VCE =10V
40
VCEsat
collector-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1
300
mV
IC = 500 mA; IB = 50 mA; note 1
1V
VBEsat
base-emitter saturation voltage
IC = 150 mA; IB = 15 mA; note 1 0.6
1.2
V
IC = 500 mA; IB = 50 mA; note 1
2V
Cc
collector capacitance
IE =ie = 0; VCB =10V;
f = 1 MHz
8pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV;
f = 1 MHz
25
fT
transition frequency
IC = 20 mA; VCE =20V;
f = 100 MHz
300
MHz
F
noise gure
IC = 100 A; VCE =5V;
RS =1k; f = 1 kHz
4dB
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
ICon = 150 mA; IBon =15mA;
IBoff = 15 mA
35
ns
td
delay time
15
ns
tr
rise time
20
ns
toff
turn-off time
250
ns
ts
storage time
200
ns
tf
fall time
60
ns
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