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參數(shù)資料
| 型號： | 933516300115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, SMD, SC-62, UPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 48K |
| 代理商： | 933516300115 |
2000 Jul 03
3
Philips Semiconductors
Product specication
NPN high-voltage transistors
BST39; BST40
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
96
K/W
Rth j-s
thermal resistance from junction to soldering point
16
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 300 V
20
nA
IEBO
emitter cut-off current
IC = 0; VEB =5V
100
nA
hFE
DC current gain
IC = 20 mA; VCE =10V
40
VCEsat
collector-emitter saturation voltage IC = 50 mA; IB =4mA
500
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
2pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz 70
MHz
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