參數資料
型號: 933516290115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 100 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, MPT3, SMD, SC-62, UPAK-3
文件頁數: 2/8頁
文件大?。?/td> 48K
代理商: 933516290115
2000 Jul 03
2
Philips Semiconductors
Product specication
NPN high-voltage transistors
BST39; BST40
FEATURES
Low current (max. 100 mA)
High voltage (max. 350 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BST15 and BST16.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BST39
AT1
BST40
AT2
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
123
Bottom view
MAM296
3
2
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BST39
400
V
BST40
300
V
VCEO
collector-emitter voltage
open base
BST39
350
V
BST40
250
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.3
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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