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參數(shù)資料
| 型號： | 933508380235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 800 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 933508380235 |
1999 Apr 15
2
Philips Semiconductors
Product specication
NPN switching transistors
BSR13; BSR14
FEATURES
High current (max. 800 mA)
Low voltage (max. 40 V).
APPLICATIONS
Switching and linear applications.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complements: BSR15 and BSR16.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
BSR13
U7
BSR14
U8
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BSR13
60
V
BSR14
75
V
VCEO
collector-emitter voltage
open base
BSR13
30
V
BSR14
40
V
VEBO
emitter-base voltage
open collector
BSR13
5V
BSR14
6V
IC
collector current (DC)
800
mA
ICM
peak collector current
800
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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