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參數(shù)資料
| 型號： | 933505280215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 933505280215 |
December 1997
2
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
BF510 to 513
DESCRIPTION
Asymmetrical N-channel planar
epitaxial junction field-effect
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
PINNING - SOT23
1
= gate
2
= drain
3
= source
MARKING CODE
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
Fig.1 Simplified outline and symbol.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
Drain-source voltage
VDS
max.
20
V
Drain current (DC or average)
ID
max.
30
mA
Total power dissipation
up to Tamb =40 °CPtot
max.
250
mW
BF510
511
512
513
Drain current
>
0.7
2.5
6
10 mA
VDS = 10 V; VGS = 0
IDSS
<
3.0
7.0
12
18 mA
Transfer admittance (common source)
VDS = 10 V; VGS = 0; f = 1 kHz
yfs >
2.5
4
6
7 mS
Feedback capacitance
VDS = 10 V; VGS =0
Crs
typ.
0.3
pF
VDS = 10 V; ID = 5 mA
Crs
typ.
0.3
0.3 pF
Noise gure at optimum source admittance
GS = 1 mS; BS = 3 mS; f = 100 MHz
VDS = 10 V; VGS = 0
F
typ.
1.5
dB
VDS = 10 V; ID = 5 mA
F
typ.
1.5
1.5 dB
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