參數資料
型號： 933373200653
廠商： NXP SEMICONDUCTORS
元件分類： 編、解碼器及復用、解復用
英文描述： 4000/14000/40000 SERIES, OTHER DECODER/DRIVER, TRUE OUTPUT, PDSO24
封裝： PLASTIC, SOT-137-1, SO-24
文件頁數： 6/6頁
文件大?。?/td> 72K
代理商： 933373200653
Philips Semiconductors
BUK7506-55A; BUK7606-55A
TrenchMOS standard level FET
Product data
Rev. 02 — 03 July 2001
6 of 15
9397 750 08421
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 30 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
80
ns
Qr
recovered charge
200
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nf29
0
50
100
150
200
250
300
350
400
02468
10
VDS (V)
ID
(A)
4.5
5.5
6.5
7.5
8.5
20
14
12
10
9
VGS (V) =
03nf28
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
5
101520
VGS (V)
RDSon
(m
)
03nf30
0
2
4
6
8
10
12
0
20
40
60
80
100
120
ID (A)
RDSon
(m
)
5.5
6
6.5
7
8
10
VGS (V) =
03ne89
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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933373210652 4000/14000/40000 SERIES, OTHER DECODER/DRIVER, INVERTED OUTPUT, PDSO24
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