參數(shù)資料
型號： 933366480215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： Si, PNP, RF SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SST, 3 PIN
文件頁數(shù)： 7/12頁
文件大小： 55K
代理商： 933366480215
1999 Jul 23
4
Philips Semiconductors
Product specication
PNP switching transistor
BSR12
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp = 300 s; δ = 0.01.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 10 V
50
nA
IE =0; VCB = 10 V; Tamb = 125 °C 5
A
ICES
collector cut-off current
VBE = 0; VCE = 10 V
50
nA
V(BR)CBO
breakdown voltage
IE = 0; IC = 10 A
15
V
V(BR)CES
breakdown voltage
VBE = 0; IC = 10 A
15
V
V(BR)EBO
breakdown voltage
IC = 0; IE = 100 A
3
V
VCEOsust
collector-emitter sustaining
voltage
IB = 0; IC = 10 mA
15
V
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 1 mA; note 1
130
mV
IC = 50 mA; IB = 5 mA; note 1
180
270
mV
IC = 100 mA; IB = 10 mA; note 1 450
mV
VBEsat
base-emitter saturation
voltage
IC = 10 mA; IB = 1 mA; note 1
725
920
mV
IC = 50 mA; IB = 5 mA; note 1
800
1150
mV
IC = 100 mA; IB = 10 mA; note 1 900
1500
mV
hFE
DC current gain
IC = 1 mA; VCE = 1 V; note 1
30
IC = 10 mA; VCE = 1 V; note 1
30
IC = 50 mA; VCE = 1 V; note 1
30
120
IC = 50 mA; VCE = 1V;
Tamb =55 °C; note 1
30
IC = 100 mA; VCE = 1 V; note 1
20
fT
transition frequency
IC =
50 mA; VCE = 10 V;
f = 500 MHz
1.5
GHz
Cc
collector capacitance
IE =Ie = 0; VCB = 5V
4.5
pF
Ce
emitter capacitance
IC =Ic = 0; VEB = 0.5 V
6pF
Switching time (see Fig.2)
ton
turn-on time
Vi =6.85 V; VBB =0V;
ICon = 30 mA; IBon = 3.0 mA
20
ns
toff
turn-off time
Vi = 11.7 V; VBB =9.85 V;
ICon = 30 mA; IBon = 3 mA;
IBoff =3mA
30
ns
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