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參數(shù)資料
| 型號： | 933347740215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 48K |
| 代理商： | 933347740215 |
November 1992
4
Philips Semiconductors
Product specication
PNP 5 GHz wideband transistor
BFT93
CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. dim = 60 dB (DIN 45004B); IC = 30 mA; VCE = 5 V; RL =75 ;
Vp =Vo at dim = 60 dB; fp = 495.25 MHz;
Vq =Vo 6 dB; fq = 503.25 MHz;
Vr =Vo 6 dB; fr = 505.25 MHz;
measured at f(p+qr) = 493.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 5 V
50
nA
hFE
DC current gain
IC = 30 mA; VCE = 5 V
20
50
fT
transition frequency
IC = 30 mA; VCE = 5 V;
f = 500 MHz
5
GHz
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
0.95
pF
Ce
emitter capacitance
Ic =ic =0;VEB = 0.5 V; f = 1 MHz
1.8
pF
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz
1
pF
GUM
maximum unilateral power gain
(note 1)
IC = 30 mA; VCE = 5V;
f = 500 MHz; Tamb =25 °C
16.5
dB
F
noise gure
IC = 10 mA; VCE = 5V;
f = 500 MHz; Tamb =25 °C
2.4
dB
Vo
output voltage
see Fig.2 and note 2
300
mV
G
UM
10 log
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
=
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