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參數(shù)資料
| 型號： | 933347730215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 933347730215 |
November 1992
2
Philips Semiconductors
Product specication
PNP 5 GHz wideband transistor
BFT92
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR92 and
BFR92A.
PINNING
PIN
DESCRIPTION
Code: W1p
1
base
2
emitter
3
collector
Fig.1 SOT23.
fpage
MSB003
Top view
12
3
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
IC
DC collector current
25
mA
Ptot
total power dissipation
up to Ts = 95 °C; note 1
300
mW
fT
transition frequency
IC = 14 mA; VCE = 10 V; f = 500 MHz
5
GHz
Cre
feedback capacitance
IC = 2 mA; VCE = 10 V; f = 1 MHz
0.7
pF
GUM
maximum unilateral power gain
IC = 14 mA; VCE = 10 V;
f = 500 MHz; Tamb =25 °C
18
dB
F
noise gure
IC = 5 mA; VCE = 10 V; f = 500 MHz;
Tamb =25 °C
2.5
dB
dim
intermodulation distortion
IC = 14 mA; VCE = 10 V; RL =75 ;
Vo = 150 mV; Tamb =25 °C;
f(p+q-r) = 493.25 MHz
60
dB
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