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參數(shù)資料
| 型號： | 933324140215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 42K |
| 代理商： | 933324140215 |
1999 Apr 12
3
Philips Semiconductors
Product specication
PNP general purpose transistors
BCW61 series
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 32 V
20
nA
IE = 0; VCB = 32 V; Tamb = 150 °C
20
A
IEBO
emitter cut-off current
IC = 0; VEB = 4V
20
nA
hFE
DC current gain
IC = 10 A; VCE = 5V
BCW61B
30
BCW61C
40
BCW61D
100
DC current gain
IC = 2 mA; VCE = 5V
BCW61B
180
310
BCW61C
250
460
BCW61D
380
630
DC current gain
IC = 50 mA; VCE = 1V
BCW61B
80
BCW61C
100
BCW61D
110
VCEsat
collector-emitter saturation voltage IC = 10 mA; IB = 0.25 mA
60
250 mV
IC = 50 mA; IB = 1.25 mA
120 550 mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.25 mA
600 850 mV
IC = 50 mA; IB = 1.25 mA
0.68 1.05 V
VBE
base-emitter voltage
IC = 2 mA; VCE = 5V
600 650 750 mV
IC = 10 A; VCE = 5V
550
mV
IC = 50 mA; VCE = 1V
720
mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
4.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
11
pF
fT
transition frequency
IC = 10 mA; VCE = 5V;
f = 100 MHz; note 1
100
MHz
F
noise gure
IC = 200 A; VCE = 5V;
RS =2k; f = 1 kHz; B = 200 Hz
26dB
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