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參數(shù)資料
| 型號： | 933324130215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 42K |
| 代理商： | 933324130215 |
1999 Apr 12
2
Philips Semiconductors
Product specication
PNP general purpose transistors
BCW61 series
FEATURES
Low current (max. 100 mA)
Low voltage (max. 32 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in a SOT23 plastic package.
NPN complement: BCW60.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
BCW61B
BB
BCW61C
BC
BCW61D
BD
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
32
V
VCEO
collector-emitter voltage
open base
32
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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