參數(shù)資料
型號： 933188180215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SST, 3 PIN
文件頁數(shù)： 6/12頁
文件大?。?/td> 99K
代理商： 933188180215
1997 Oct 29
3
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFR93
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. Die mounted in a SOT37 package (BFR91).
3. IC = 30 mA; VCE = 5 V; RL =75 ; VSWR < 2; Tamb =25 °C;
Vp =VO = 300 mV at fp = 495.25 MHz;
Vq =VO 6 dB at fq = 503.25 MHz;
Vr =VO 6 dB at fr = 505.25 MHz;
measured at fp +fq fr = 493.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =10V
50
nA
hFE
DC current gain
IC = 30 mA; VCE = 5 V
40
90
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
0.7
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
1.8
pF
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz;
Tamb =25 °C
0.8
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
5
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 30 mA; VCE = 5 V; f = 500 MHz;
Tamb =25 °C
16.5
dB
F
noise gure (note 2)
IC = 2 mA; VCE = 5 V; f = 500 MHz;
ZS = opt.; Tamb =25 °C
1.9
dB
dim
intermodulation distortion
note 3
60
dB
G
UM
10 log
S
21
2
1
S
11
2
–
1
S
22
2
–
-------------------------------------------------------------- dB
=
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