參數(shù)資料
型號(hào)： 933166820113
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 齊納二極管
英文描述： 5.6 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
封裝： HERMETIC SEALED, GLASS, SC-40, 2 PIN
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 61K
代理商： 933166820113
2002 Feb 27
2
Philips Semiconductors
Product specication
Voltage regulator diodes
BZX79 series
FEATURES
Total power dissipation: max. 500 mW
Two tolerance series: ±2%, and approx. ±5%
Working voltage range: nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24
±2% (BZX79-B) and
approx.
±5% (BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
Fig.1
Simplified outline (SOD27; DO-35) and
symbol.
The diodes are type branded.
handbook, halfpage
MAM239
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
≤ 50 °C; max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
250
mA
IZSM
non-repetitive peak reverse current
tp = 100 s; square wave;
Tj =25 °C prior to surge
see Tables 1 and 2 A
Ptot
total power dissipation
Tamb =50 °C; note 1
400
mW
Tamb =50 °C; note 2
500
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 s; square wave;
Tj =25 °C prior to surge; see Fig.3
40
W
Tstg
storage temperature
65
+200
°C
Tj
junction temperature
65
+200
°C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
VF
forward voltage
IF = 10 mA; see Fig.4
0.9
V
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