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參數(shù)資料
| 型號(hào)： | 90MT80KB |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 橋式整流 |
| 英文描述： | 3 PHASE, 120 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | INT-A-PAK-6 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 120K |
| 代理商： | 90MT80KB |
90-110MT..KB Series
Bulletin I27501 rev. A 05/03
Fig. 8 - Total Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
200
300
400
500
600
700
800
900
110
100
P
e
a
k
H
a
lf
S
in
e
W
a
v
e
F
o
rwa
rd
C
u
rre
n
t
(A
)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
110MT..KB Series
Initial T = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
J
200
300
400
500
600
700
800
900
1000
0.01
0.1
1
Pe
ak
H
al
f
S
in
e
W
av
e
Fo
rw
ar
d
C
u
rre
n
t
(A
)
Pulse Train Duration (s)
110MT..KB Series
Initial T = 150°C
No Voltage Reapplied
Rated V
Reapplied
RRM
Versus Pulse Train Duration.
Maximum Non Repetitive Surge Current
J
025
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
1.5 K/W
1 K/W
0.7 K/W
0.5
K/W
0.4
K/W
0.3
K/W
0.2
K/W
0.1
2
K/W
R
=
0.0
5
K
/W
-
D
elt
a
R
th
S
A
0
50
100
150
200
250
300
350
400
450
0
25
50
75
100
125
150
Total Output Current (A)
Max
imu
m
T
ot
a
l
Po
we
r
Los
s
(W)
120°
(Rect)
110MT..KB Series
T= 150°C
J
Fig. 11 - Thermal Impedance Z
thJC
Characteristic
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
C
Tr
a
n
si
e
nt
T
her
m
al
Im
pe
dan
c
e
Z
(K
/W
)
90MT..KB Series
110MT..KB Series
Per Junction
Steady State Value
R= 1.26 K/W
R= 1.07 K/W
(DC Operation)
thJC
Document Number: 93556
www.vishay.com
6
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| 90MT80K | 3 PHASE, 90 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
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| 90MT140K | 3 PHASE, 90 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE |
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