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參數(shù)資料
| 型號： | 8Q1024K8SRAM |
| 廠商： | Aeroflex Inc. |
| 英文描述： | high-performance 1M byte (8Mbit) CMOS static RAM |
| 中文描述： | 高性能1M字節(jié)（8Mbit）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 238K |
| 代理商： | 8Q1024K8SRAM |
5
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(-40
°
C to +125
°
C) (V
DD
= 3.3V + 0.3)
SYMBOL
PARAMETER
Notes:
* Post-radiation performance guaranteed at 25
°
C per MIL-STD-883 Method 1019.
1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
CONDITION
MIN
MAX
UNIT
V
IH
High-level input voltage
(CMOS)
2.0
V
V
IL
Low-level input voltage
(CMOS)
0.8
V
V
OL1
Low-level output voltage
I
OL
= 8mA, V
DD
=3.0V
0.4
V
V
OL2
Low-level output voltage
I
OL
= 200
μ
A,V
DD
=3.0V
0.08
V
V
OH1
High-level output voltage
I
OH
= -4mA,V
DD
=3.0V
2.4
V
V
OH2
High-level output voltage
I
OH
= -200
μ
A,V
DD
=3.0V
V
DD
-0.10
V
C
IN
1
Input capacitance
= 1MHz @ 0V
20
pF
C
IO1
Bidirectional I/O capacitance
= 1MHz @ 0V
24
pF
I
IN
Input leakage current
V
SS
< V
IN
< V
DD,
V
DD
= V
DD
(max)
-2
2
μ
A
I
OZ
Three-state output leakage current
0V < V
O
< V
DD
V
DD
= V
DD
(max)
G = V
DD
(max)
-2
2
μ
A
I
OS2, 3
Short-circuit output current
0V < V
O
< V
DD
-90
90
mA
I
DD
(OP)
Supply current operating
@ 1MHz
Inputs: V
IL
= 0.8V,
V
IH
= 2.0V
I
OUT
= 0mA
V
DD
= V
DD
(max)
150
mA
I
DD1
(OP)
Supply current operating
@40MHz
Inputs: V
IL
= 0.8V,
V
IH
= 2.0V
I
OUT
= 0mA
V
DD
= V
DD
(max)
220
mA
I
DD2
(SB)
Nominal standby supply current
@0MHz
Inputs: V
IL
= V
SS
I
OUT
= 0mA
En = V
DD
- 0.5,
V
DD
= V
DD
(max)
V
IH
= V
DD
- 0.5V
4
25
mA
mA
-40
°
C and 25
°
C
+125
°
C
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