參數(shù)資料
型號(hào)： 8P256SRV0201I25
元件分類： EEPROM
英文描述： EEPROM
中文描述： EEPROM的
文件頁數(shù)： 1/10頁
文件大?。?/td> 121K
代理商： 8P256SRV0201I25
June 2000 Rev. 1 - ECO #12896
1
PCMCIA Flash Memory Card
SRV Series
PC Card Products
Features
High Performance SRAM memory Card
Universal 3.3 to 5 Volt Supply allows for wider
compatibility between systems.
Fast Access times: 150ns @ 5V
250ns @ 3.3V
x8/x16 PCMCIA standard interface
Low Power CMOS technology provides very low
power and reliable data retention characteristics
- standby current < 100A typical
Rechargeable Lithium battery with recharge circuitry
- eliminates the need for replaceable batteries
- standby current during recharge typically < 2mA
- battery backup time
7 months
- type I card
18 months - type II card
typical based on 4MB (lower densities will
have greater storage times)
Unlimited write cycles, no endurance issues
Optional Features:
2KB EEPROM attribute memory containing
CIS
Optional Hardware Write Protect switch
PC Card Standard Type I or Type II Form Factor
The WEDC SRAM Series (SRV) memory cards
offer a high performance nonvolatile storage solution
for code and data storage, disk caching, and write
intensive mobile and embedded applications.
Packaged in PCMCIA type I or type II housing (type
II for cards with extended battery backup time and
8MB cards), the WEDC SRAM SRV series is based
on 1 or 4Mbit SRAM memories, providing densities
from 256 Kilobytes to 8 Megabytes.
The SRV series of SRAM memory cards is a
universal 3V/ 5V power supply and operates at
speeds as high as 150ns. The cards are based on
advanced CMOS technology providing very low
power and reliable data retention characteristics.
WEDC’s SRAM cards contain a rechargeable
lithium battery and recharge circuitry, eliminating the
need for replaceable batteries found in many SRAM
cards.
WEDC’s standard cards are shipped with WEDC’s
SRAM Logo. Cards are also available with blank
housings (no Logo). The blank housings are available
in both a recessed (for label) and flat housing. Please
contact WEDC sales representative for further
information on Custom artwork.
SRAM Memory Card
256KB through 8MB
Block Diagram
4MB SRAM Card Shown
+
decoder
and
control
logic
address
buffer
[A1..A19]
/CSLi
/CSHi
[DO..D7]
[D8..D15]
Write Prot
Switch
S1
WP
Vcc
[A20..A22]
ATTRIBUTE
MEMORY
CE1#
CE2#
WE#
OE#
REG#
++ +
/CS-A
/RD
/WR
CTRL
A0
Power Management
and
Battery Control
Lithium Bat.
to internal
power
supply
Vcc
BVD1
BVD2
GND
VS1
VS2
[D8..D15]
[DO..D7]
I/O BUFFER
SRAM
512K x 8
[A1..A11]
GND
NC
+
2. pull up resistor (min 10k)
Notes: 1. pull down resistor (min 100k)
+
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
SRAM
512K x 8
General Description
相關(guān)PDF資料
PDF描述
8P256SRV0202C15 EEPROM
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