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參數(shù)資料
| 型號： | 8P006SRV1400C25 |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 8P006SRV1400C25 |
June 2000 Rev. 1 - ECO #12896
5
PCMCIA Flash Memory Card
SRV Series
PC Card Products
Absolute Maximum Ratings (2)
Operating Temperature TA (ambient)
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C
Storage Temperature
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C
Voltage on any pin relative to VSS
-0.5V to +5.5V (1)
VCC supply Voltage relative to VSS
-0.5V to +7.0V
Notes:
(1) During transitions, inputs may undershoot to
-2.0V or overshoot to VCC +2.0V for periods less
than 20ns.
(2) Stress greater than those listed under
“Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress
rating only and functional operation at these or
any other conditions greater than those indicated
in the operational sections of this specification is
not implied. Exposure to absolute maximum rating
conditions for extended periods may affect
reliability.
Sym
Parameter
Density
Notes
Min
Typ
(3)
Max
Units
Test Conditions
64KB
90
180
128KB
90
180
256KB
90
180
512KB
90
180
ICC
VCC Active Current
1MB
to
8MB
1
110
190
mA
VCC = 5.25V
tcycle = 150ns
ICCS
VCC Standby Current
All
2,4
< 0.1
< 1
10
mA
VCC = 5.25V
Control Signals = VCC
ILI
Input Leakage Current
All
5,6
±20
A
VCC = VCCMAX
Vin =VCC or VSS
ILO
Output Leakage Current
All
6
±20
A
VCC = VCCMAX
Vout =VCC or VSS
VIL
Input Low Voltage
All
6
0
0.8
V
VIH
Input High Voltage
All
6
3.85
VCC
+0.5
V
VOL
Output Low Voltage
All
6
0.4
V
IOL = 3.2mA
VOH
Output High Voltage
All
6
VCC-
0.4
VCC
V
IOH = -2.0mA
Notes:
1. All currents are for x16 mode and are RMS values unless otherwise specified.
2. Control Signals: CE
1#, CE2#, OE#, WE#, REG#.
3. Typical: VCC = 5V, T = +25C.
4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully
charged battery. ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully
discharged battery (0V). Battery will recharge to 1.5V in 20 sec.
5. Values are the same for byte and word wide modes for all card densities.
6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 A when VIN = GND due to
internal pull-up resistors.
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = 5V ± 0.2V
DC Characteristics (1)
Battery Characteristics
SRV11-14
SRV01-04
Parameter
Density
Notes
Type I
Type II
Units
Conditions
Battery Life
All
(1)
min 10
years
Normal operation, T=25C
256KB
-
24
60
512KB, 1MB
32
18
45
2MB
22
12
30
4MB
12
7
17
6MB
12
717
Battery
Backup Time
8MB
(2)
-
-12
months
(typical)
T=25C
Battery backup time is a
calculated value and is not
guaranteed. This should not be
used to schedule battery
recharging.
Notes:
1. Battery Life refers to functional lifetime of battery.
2. Battery backup time is density and temperature dependent.
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