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參數(shù)資料
| 型號： | 8P006SRV1302C15 |
| 元件分類： | EEPROM |
| 英文描述： | EEPROM |
| 中文描述： | EEPROM的 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 8P006SRV1302C15 |
June 2000 Rev. 1 - ECO #12896
4
PCMCIA Flash Memory Card
SRV Series
PC Card Products
Symbol
Type
Name and Function
A0 - A25
INPUT
ADDRESS INPUTS: A0 through A25 enable direct addressing of up
to 64MB of memory on the card. Signal A0 is not used in word access
mode. A25 is the most significant bit. (address pins used are based on
card density,see pinout for highest used address pin)
DQ0 - DQ15
INPUT/OUT
PUT
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the
bi-directional databus. DQ0 - DQ7 constitute the lower (even) byte and
DQ8 - DQ15 the upper (odd) byte. DQ15 is the MSB.
CE1#, C E2 #
INPUT
CARD ENA BLE 1 AND 2: CE1# enables even byte accesses, C E2 #
enables odd byte accesses. Multiplexing A0, C E1# and C E2 # allows 8-
bit hosts to access all data on DQ0 - DQ7.
OE#
INPUT
OUTPUT ENA BLE: Active low signal enabling read data from the
memory card.
WE#
INPUT
WRITE ENA BLE: Active low signal gating write data to the memory
card.
RDY/BSY #
OUTPUT
READY/BUSY OUTPUT: Not used for SRAM cards
CD1#, CD2 #
OUTPUT
CARD DETEC T 1 and 2: Provide card insertion detection. These
signals are connected to ground internally on the memory card. The
host socket interface circuitry shall supply 10K-ohm or larger pull-up
resistors on these signal pins.
WP
OUTPUT
WRITE PROTEC T: Follows hardware Write Protect Switch. When
Switch is placed in on position, signal is pulled high (10K ohm). When
switch is off signal is pulled low.
VPP1, VPP2
N.C.
PROGRAM/ERASE POW ER SUPPLY: Not used for SRAM
cards.
VCC
CARD POW ER SUPPLY: 3.3V / 5.0V for all internal circuitry.
GND
GROUND: for all internal circuitry.
REG #
INPUT
ATTRIBUTE MEMORY SELEC T : only used with cards built with
optional attribute memory.
RST
INPUT
RESET: Not used for SRAM cards
WAIT #
OUTPUT
WAIT: This signal is pulled high internally for compatibility. No wait
states are generated.
BVD1, BVD2
OUTPUT
BA TTERY VOLTAG E DETEC T: Provides status of Battery
voltage.
BVD2 = BVD1 = Voh (battery voltage is guaranteed to retain data)
BVD2 = Vol, BVD1 = Voh (data is valid, battery recharge required)
BVD2 = BVD1 = Vol (data may no longer be valid, battery requires
extended recharge)
VS1, VS2
OUTPUT
VOLTAG E SENSE: Notifies the host socket of the card's VCC
requirements. VS1is grounded and VS2 is open to indicate a 3.3V/5V
16 bit card, with a 5V key, has been inserted.
RFU
RESERV ED FOR FUTURE USE
N.C.
NO INTERNA L CONNECTION TO CARD: pin may be driven
or left floating
Card Signal Description
SRAM
FUNCTIONAL TRUTH TABLE
READ function
Common Memory
Attribute M emory
Function Mode
/CE2 /CE1
A0
/OE
/WE
/REG
D15-D8
D7-D0
/REG
D15-D8
D7-D0
Standby Mode
H
X
High-Z
X
High-Z
Byte Access (8 bits)
H
L
H
High-Z
Even-Byte
L
High-Z
Even-Byte
H
L
H
L
H
High-Z
Odd-Byte
L
High-Z
Not Valid
Word Access (16 bits)
L
X
L
H
Odd-Byte Even-Byte
L
Not Valid Even-Byte
Odd-Byte Only Access
L
H
X
L
H
Odd-Byte
High-Z
L
Not Valid
High-Z
WRITE function
Standby Mode
H
X
Byte Access (8 bits)
H
L
H
L
H
X
Even-Byte
L
X
Even-Byte
H
L
H
L
H
X
Odd-Byte
L
X
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 8P006SRV1302C25 | EEPROM |
| 8P006SRV1302I15 | EEPROM |
| 8P006SRV1302I25 | EEPROM |
| 8P006SRV1400C15 | EEPROM |
| 8P006SRV1400C25 | EEPROM |
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