參數(shù)資料
型號: 8N60
廠商: 友順科技股份有限公司
英文描述: 7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
中文描述: 七點五安培,600/650伏特N溝道功率MOSFET
文件頁數(shù): 7/8頁
文件大?。?/td> 220K
代理商: 8N60
8N60
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R502-115,B
7 of 8
T Y PICAL CHARACTERIST ICS (Cont.)
-100
Junction Temperature, T
J
(
)
-50
50
200
100
150
1.2
0
1.1
1.0
0.9
0.8
Note:
1. V
GS
=0V
2. I
D
=250
μ
A
Breakdown Voltage Variation vs.
Temperature
-100
Junction Temperature, T
J
(
)
-50
50
200
100
150
3.0
0
2.0
1.0
0.5
0.0
1.5
2.5
On-Resistance Junction Temperature
Note:
1. V
GS
=10V
2. I
D
=4A
10
1
0.1
Drain-Source Voltage, V
DS
(V)
D
D
(
100
10
1
100
μ
s
1000
10ms
DC
Maximum Safe Operating Area
D
(
Case Temperature, T
C
(
)
75
100
0
125
50
25
2
4
6
8
10
Maximum Drain Current vs. Case
Temperature
Notes:
1. T
J
=25
2. T
J
=150
3.Single Pulse
150
Operation in This Area is Limited by R
DS(on)
100
1ms
100
μ
s
1
0.1
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration, t
1
(sec)
Transient Thermal Response
Curve
Notes:
1.
2. Duty Factor, D=t1/t2
3.T
JM
-T
C
=P
DM
×
JC
(t) = 0.85
/W Max.
JC
(t)
D=0.5
D=0.2
D=0.1
D=0.05
0.02
0.01
Single pulse
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