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參數(shù)資料
| 型號： | 8AF4 |
| 英文描述： | 400V pie X IfavA Std. Recovery Diode in a B-47PPpackage |
| 中文描述： | 400V餡餅X IfavA性病?；謴?fù)二極管的一架B - 47PPpackage |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 168K |
| 代理商： | 8AF4 |
8AF Series
2
Bulletin I20262 05/96
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
V
RRM
, maximum repetitive
peak reverse voltage
V
V
RSM
, maximum non-
repetitive peak rev. voltage
V
I
RRM
max.
@ T
J
= T
J
max
mA
05
1
2
50
100
200
75
150
300
7
7
5
4
400
500
5
8AF
I
F(AV)
Maximum average forward current
50
A
180° conduction, half sine wave
@ Case temperature
150
°C
I
F(RMS)
I
FSM
Maximum RMS forward current
79
A
Maximum peak, one-cycle forward,
714
A
t = 10ms
No voltage
non-repetitive surge current
747
t = 8.3ms
reapplied
600
t = 10ms
100% V
RRM
reapplied
628
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
2546
A
2
s
t = 10ms
No voltage
Initial T
J
= T
J
max.
2324
t = 8.3ms
reapplied
1800
t = 10ms
100% V
RRM
reapplied
1643
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
25455
A
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level value of threshold voltage
0.60
V
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(
π
x I
F(AV)
< I < 20 x
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(
π
x I
F(AV)
< I < 20 x
π
x I
F(AV)
), T
J
= T
J
max.
T
J
= 25°C, I
FM
=
π
x rated I
F(AV)
V
F(TO)2
High level value of threshold voltage
0.68
r
f1
Low level value of forward slope resistance
6.66
m
r
f2
V
FM
High level value of forward slope resistance
6.25
Maximum forward voltage drop
1.45
V
Parameter
8AF
Units Conditions
Forward Conduction
T
J
Max. junction operating temperature range
- 65 to 195
°C
T
stg
Storage temperature range
- 65 to 195
R
thJC
R
thCS
Max. thermal resistance, junction to case
Typical thermal resistance, case to heatsink
0.60
0.50
K/W
DC operation
As per mounting details
wt
Approximate weight
10 (0.36)
g (oz)
Case style
B-47
See outline table
Parameter
8AF
Units Conditions
Thermal and Mechanical Specifications
MOUNTING: A 12.6 ± 0.02mm (0.496 to 0.497 inch) diameter hole should be drilled in heatsink, the leading edge chamfered to 0.038mm (0.015
inch) x 45°. The autodiode should then be press fitted, ensuring that the sides of the autodiode are kept parallel to the sides of the hole.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 8AF4NLH | 功能描述:整流器 400 Volt 50 Amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 8AF4NLV | 功能描述:整流器 400 Volt 50 Amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 8AF4NPP | 功能描述:DIODE STD REC 400V 50A B-47 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| 8AF4RLH | 功能描述:整流器 50 Amp 400 Volt 747 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 8AF4RLV | 功能描述:整流器 50 Amp 400 Volt 747 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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