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參數(shù)資料
| 型號： | 85EPS08J |
| 英文描述： | 800V 85A Std. Recovery Diode in a PowIRtab (Short)package |
| 中文描述： | 800V的85A條性病?；謴?fù)二極管在PowIRtab（短）封裝 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 79K |
| 代理商： | 85EPS08J |
2
85EPS..
SAFE
IR
Series
Preliminary Data Sheet I2139 10/97
T
J
T
stg
R
thJC
Max. Thermal Resistance Junction
to Case
R
thJA
Max. Thermal Resistance Junction
to Ambient
R
thCS
Typical Thermal Resistance, Case o
Heatsink
Max. Junction Temperature Range
Max. Storage Temperature Range
- 40 o 150
- 40 o 150
°C
°C
0.35
°C/W
DC operation
40
°C/W
0.2
°C/W
Mounting surface smooth and greased
wt
T
Approximate Weight
Mounting Torque
6 (0.21)
6 (5)
g (oz.)
Min.
Max.
12 (10)
TO-247
Case Style
Modified
Thermal-Mechanical Specifications
Parameters
85EPS..
Units
Conditions
Kg-cm
(Ibf-in)
Voltage Ratings
Part Number
V
RRM
, maximum
peak reverse voltage
V
V
RSM
, maximum non repetitive
peak reverse voltage
V
I
RRM
150°C
mA
85EPS08
800
900
1
85EPS12
1200
1300
85EPS16
1600
1700
V
FM
r
t
V
F(TO)
Threshold voltage
Max. Forward Voltage Drop
1.1
V
@ 85A, T
J
= 25°C
Forward slope resistance
3.17
m
0.86
V
I
RM
Max. Reverse Leakage Current
0.1
T
J
= 25 °C
T
J
= 150 °C
3.0
Electrical Specifications
Parameters
85EPS..
Units
Conditions
T
J
= 150°C
V
R
= rated V
RRM
mA
I
F(AV)
Max. Average Forward Current
I
FSM
Surge Current
85
A
@ T
C
= 95° C, 180° conduction half sine wave
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
Max. Peak One Cycle Non-Repetitive
1450
1500
I
2
t
Max. I
2
t for fusing
10500
10ms Sine pulse, rated V
RRM
applied
10ms Sine pulse, no voltage reapplied
9550
I
2
√
t
Max. I
2
√
t for fusing
105000
A
2
√
s
t = 0.1 to 10ms, no voltage reapplied
Absolute Maximum Ratings
Parameters
85EPS..
Units
Conditions
A
A
2
s
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