參數資料
型號: 8550SG-E-T92-B
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 小信號晶體管
英文描述: 700 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: HALOGEN FREE PACKAGE-3
文件頁數: 2/4頁
文件大小: 182K
代理商: 8550SG-E-T92-B
8550S
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
www.unisonic.com.tw
QW-R206-002,E
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATING
UNITS
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-700
mA
SOT-23
350
mW
Collector Dissipation(Ta=25°C)
TO-92
PC
1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=-100μA, IE=0
-30
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-1mA, IB=0
-20
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100μA, IC =0
-5
V
Collector Cut-off Current
ICBO
VCB=-30V, IE=0
-1
μA
Emitter Cut-off Current
IEBO
VEB=-5V, IC =0
-100
nA
hFE1
VCE=-1V, IC=-1mA
100
hFE2
VCE=-1V, IC=-150 mA
120
400
DC Current Gain
hFE3
VCE=-1V, IC=-500mA
40
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-500mA, IB=-50mA
-0.5
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-500mA, IB=-50mA
-1.2
V
Base-Emitter Saturation Voltage
VBE
VCE=-1V, IC=-10mA
-1.0
V
Current Gain Bandwidth Product
fT
VCE=-10V, IC=-50mA
100
MHz
Output Capacitance
Cob
VCB=-10V, IE=0, f=1MHz
9.0
pF
CLASSIFICATION OF hFE2
RANK
C
D
E
RANGE
120-200
160-300
280-400
相關PDF資料
PDF描述
8550S-C-AE3-R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
8550S-C-T92-B LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
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8550S-D-AE3-R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
8550S-D-T92-B LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR
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