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參數(shù)資料
| 型號： | 853S011BGILFT |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | 時鐘及定時 |
| 英文描述： | LOW SKEW CLOCK DRIVER, PDSO8 |
| 封裝： | 3 X 3 MM, 0.97 MM HEIGHT, ROHS COMPLIANT, MO-187, TSSOP-8 |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 825K |
| 代理商： | 853S011BGILFT |
ICS853S011BGI REVISION A MAY 12, 2010
14
2010 Integrated Device Technology, Inc.
ICS853S011BI Data Sheet
LOW SKEW, 1-TO-2, DIFFERENTIAL-TO-2.5V, 3.3V LVPECL/ECL FANOUT BUFFER
Power Considerations
This section provides information on power dissipation and junction temperature for the ICS853S011BI.
Equations and example calculations are also provided.
1.
Power Dissipation.
The total power dissipation for the ICS853S011BI is the sum of the core power plus the power dissipated in the load(s).
The following is the power dissipation for VCC= 3.8V, which gives worst case results.
NOTE: Please refer to Section 3 for details on calculating power dissipated in the load.
Power (core)MAX = VCC_MAX * IEE_MAX = 3.8V * 25mA = 95mW
Power (outputs)MAX = 29.86mW/Loaded Output pair
If all outputs are loaded, the total power is 2 * 29.86mW = 59.72mW
Total Power_MAX (3.3V, with all outputs switching) = 95mW + 59.72mW = 154.72mW
2. Junction Temperature.
Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad directly affects the reliability of the device. The
maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond
wire and bond pad temperature remains below 125°C.
The equation for Tj is as follows: Tj =
θ
JA * Pd_total + TA
Tj = Junction Temperature
θ
JA = Junction-to-Ambient Thermal Resistance
Pd_total = Total Device Power Dissipation (example calculation is in section 1 above)
TA = Ambient Temperature
In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance
θ
JA must be used. Assuming no air flow and
a multi-layer board, the appropriate value is 145.4°C/W per Table 5A below.
Therefore, Tj for an ambient temperature of 85°C with all outputs switching is:
85°C + 0.155W * 145.4°C/W = 107.5°C. This is below the limit of 125°C.
This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of
board (multi-layer).
Table 5A. Thermal Resitance θJA for 8 Lead TSSOP, Forced Convection
Table 5A. Thermal Resitance θJA for 8 Lead SOIC, Forced Convection
θ
JA vs. Air Flow
Meters per Second
01
2.5
Multi-Layer PCB, JEDEC Standard Test Boards
145.4°C/W
141.3°C/W
139.3°C/W
θ
JA vs. Air Flow
Meters per Second
01
2.5
Multi-Layer PCB, JEDEC Standard Test Boards
102.0°C/W
95.0°C/W
90.6°C/W
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| 853S011BMILF | 功能描述:時鐘緩沖器 1:2 LVPECL/ECL Fanout Buffer RoHS:否 制造商:Texas Instruments 輸出端數(shù)量:5 最大輸入頻率:40 MHz 傳播延遲（最大值）: 電源電壓-最大:3.45 V 電源電壓-最小:2.375 V 最大功率耗散: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:LLP-24 封裝:Reel |
| 853S011BMILFT | 功能描述:時鐘驅(qū)動器及分配 1:2 LVPECL/ECL Fanout Buffer RoHS:否 制造商:Micrel 乘法/除法因子:1:4 輸出類型:Differential 最大輸出頻率:4.2 GHz 電源電壓-最大: 電源電壓-最小:5 V 最大工作溫度:+ 85 C 封裝 / 箱體:SOIC-8 封裝:Reel |
| 853S011CGILF | 功能描述:時鐘緩沖器 1:2 LVPECL/ECL Fanout Buffer RoHS:否 制造商:Texas Instruments 輸出端數(shù)量:5 最大輸入頻率:40 MHz 傳播延遲（最大值）: 電源電壓-最大:3.45 V 電源電壓-最小:2.375 V 最大功率耗散: 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:LLP-24 封裝:Reel |
| 853S011CGILFT | 功能描述:時鐘驅(qū)動器及分配 1:2 LVPECL/ECL Fanout Buffer RoHS:否 制造商:Micrel 乘法/除法因子:1:4 輸出類型:Differential 最大輸出頻率:4.2 GHz 電源電壓-最大: 電源電壓-最小:5 V 最大工作溫度:+ 85 C 封裝 / 箱體:SOIC-8 封裝:Reel |
| 853S011CMILF | 制造商:IDT from Components Direct 功能描述:IDT 853S011CMILF CLOCK BUFFERS - Rail/Tube 制造商:IDT 功能描述:IDT 853S011CMILF Clock Buffers |
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