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參數(shù)資料
| 型號： | 84140-01 |
| 廠商： | PEREGRINE SEMICONDUCTOR CORP |
| 元件分類： | 放大器 |
| 英文描述： | Ultra-High Linearity Broadband Quad MOSFET Array |
| 中文描述： | 0 MHz - RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | MSOP-8 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 163K |
| 代理商： | 84140-01 |
Product Specification
PE84140
Page 2 of 7
2003-2006 Peregrine Semiconductor Corp. All rights reserved.
Document No. 70-0127-02
│ UltraCMOS RFIC Solutions
Table 2. Pin Descriptions
Table 3. Absolute Maximum Ratings
Electrostatic Discharge (ESD) Precautions
This MOSFET device has minimally protected
inputs and is highly susceptible to ESD damage.
When handling this UltraCMOS device,
observe the same precautions that you would use
with other ESD-sensitive devices.
Latch-Up Avoidance
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
Figure 3. Pin Configuration (Top View)
Absolute Maximum Ratings are those values
listed in the above table. Exceeding these values
may cause permanent device damage.
Functional operation should be restricted to the
limits in the DC Electrical Specifications table.
Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Device Description
The PE84140 passive broadband Quad MOSFET
array is designed for use in up-conversion and
down-conversion applications for high
performance systems.
The PE84140 is an ideal mixer core for a wide
range of mixer products, including module level
solutions that incorporate baluns or other single-
ended matching structures enabling three-port
operation.
The performance level of this passive mixer is
made possible by the very high linearity afforded
by Peregrine’s UltraCMOS process.
1
2
3
4
8
7
6
5
PE84140
LOM
LOP
GND
IFP
RFM
RFP
GND
IFM
Pin
No.
Pin
Name
Description
1
LOM
LO Input Connection (Gate)
2
LOP
LO Input Connection (Gate)
3
GND
Ground Connection
4
IFP
IF Output Connection (Drain)
5
IFM
IF Output Connection (Drain)
6
GND
Ground Connection
7
RFP
RF Input Connection (Source)
8
RFM
RF Input Connection (Source)
Symbol
Parameter/Conditions
Min
Max
Units
TST
Storage temperature range
-65
150
°C
TOP
Operating temperature
range
-55
125
°C
VDC + AC
Maximum DC plus peak
AC voltage across Drain-
Source
±3.3
V
VDC+AC
Maximum DC plus peak
AC voltage across Gate-
Drain or Gate-Source
±4.2
V
VESD
ESD Sensitive Device
250
V
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