
www.vishay.com
2
Document Number 82159
Rev. 2, 05-May-03
VISHAY
TSOP11..SK1
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Voltage
Electrical and Optical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Supply Current (Pin 2)
Typical Characteristics
(T
amb
= 25
°
C unless otherwise specified)
Test condition
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
T
sd
Value
Unit
V
(Pin 2)
- 0.3 to + 6.0
Supply Current
(Pin 2)
5
mA
Output Voltage
(Pin 3)
- 0.3 to + 6.0
V
Output Current
(Pin 3)
5
mA
Junction Temperature
100
°C
Storage Temperature Range
- 25 to + 85
°C
Operating Temperature Range
- 25 to + 85
°C
Power Consumption
(T
amb
≤
85 °C)
t
≤
10 s, 1 mm from case
50
mW
Soldering Temperature
260
°C
Test condition
Symbol
I
SD
I
SH
V
S
d
Min
0.8
Typ.
1.2
Max
1.5
Unit
mA
V
S
= 5 V, E
v
= 0
V
S
= 5 V, E
v
= 40 klx, sunlight
1.5
mA
Supply Voltage (Pin 2)
4.5
5.5
V
Transmission Distance
E
v
= 0, test signal see fig.3,
IR diode TSAL6200, I
F
= 0.4 A
I
OSL
= 0.5 mA, E
e
= 0.7 mW/m
2
,
f = f
o
, test signal see fig.1
Test signal see fig.1
35
m
Output Voltage Low (Pin 3)
V
OSL
250
mV
Irradiance (30 - 40 kHz)
E
e min
E
e min
E
e min
E
e min
E
e max
1/2
0.4
0.6
mW/m
2
mW/m
2
mW/m
2
mW/m
2
W/m
2
deg
Test signal see fig.3
0.35
0.5
Irradiance (56 kHz)
Test signal see fig.1
0.45
0.7
Test signal see fig.3
0.40
0.6
Irradiance
Test signal see fig.1
30
Directivity
Angle of half transmission
distance
± 45
Figure 1. Output Function
E
e
T
t
pi
*)
t
V
O
V
OH
V
OL
t
po2 )
t
14337
Optical Test Signal
(IR diode TSAL6200, I
F
=0.4 A, N=6 pulses, f=f
0
, T=10 ms)
Output Signal
t
d1 )
1 )
3/f
0
< t
d
< 9/f
0
2 )
t
pi
– 4/f
0
< t
po
< t
pi
+ 6/f
0
*) t
pi
6/fo is recommended for optimal function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
t
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.1
1.0
10.0
100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
16907
p
Input Burst Duration
= 950 nm,
optical test signal, fig.1
Output Pulse