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參數(shù)資料
| 型號(hào)： | 80N055 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 79K |
| 代理商： | 80N055 |
MOS FIELD EFFECT TRANSISTOR
NP80N055CLE, NP80N055DLE, NP80N055ELE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D14097EJ3V0DS00 (3rd edition)
March 2001 NS CP(K)
The mark
#
shows major revised points.
1999,2000
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
R
DS(on)1
= 11 m
MAX. (V
GS
= 10 V, I
D
= 40 A)
R
DS(on)2
= 13 m
MAX. (V
GS
= 5 V, I
D
= 40 A)
Low C
iss
: C
iss
= 2900 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Note1
Drain Current (Pulse)
Note2
Total Power Dissipation (T
A
= 25 °C)
Total Power Dissipation (T
C
= 25 °C)
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
I
AS
E
AS
T
ch
T
stg
55
±
20
±
80
±
200
1.8
120
V
V
A
A
W
W
A
mJ
°C
°C
45 / 30 / 10
2.0 / 90 / 100
175
–55 to +175
Notes 1.
Calculated constant current according to MAX. allowable channel
temperature.
2.
PW
≤
10
μ
s, Duty cycle
≤
1 %
3.
Starting T
ch
= 25 °C, R
G
= 25
, V
GS
= 20 V
→
0 V (see Figure
4.)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
R
th(ch-C)
R
th(ch-A)
1.25
83.3
°C/W
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP80N055CLE
TO-220AB
NP80N055DLE
TO-262
NP80N055ELE
TO-263
(TO-220AB)
(TO-262)
(TO-263)
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