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參數(shù)資料
| 型號： | 7R48FLE222I25 |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | PROM |
| 英文描述： | 32M X 16 FLASH 5V PROM CARD, 150 ns, UUC68 |
| 封裝： | CARD-68 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大小： | 238K |
| 代理商： | 7R48FLE222I25 |
5
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
PCMCIA Flash Memory Card
FLE Series
August 2000
Rev. 4
CARD SIGNAL DESCRIPTION
Symbol
Type
Name and Function
A0 - A25
INPUT
ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not
used in word access mode. A25 is the most signicant bit
DQ0 - DQ15
INPUT/OUTPUT
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-directional databus. DQ15 is the MSB.
CE1#, CE2#
INPUT
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2# enables odd byte accesses. Multiplexing A0,
CE1# and CE2# allows 8-bit hosts to access all data on DQ0 - DQ7.
OE#
INPUT
OUTPUT ENABLE: Active low signal gating read data from the memory card.
WE#
INPUT
WRITE ENABLE: Active low signal gating write data to the memory card.
RDY/BSY#
OUTPUT
READY/BUSY OUTPUT: Indicates status of internally timed erase or program algorithms. A high output indicates that
the card is ready to accept accesses. A low output indicates that one or more devices in the memory card are busy
with internally timed erase or write activities.
CD1#, CD2#
OUTPUT
CARD DETECT 1 and 2: Provide card insertion detection. These signals are connected to ground internally on the
memory card. The host socket interface circuitry shall supply 10K-ohm or larger pull-up resistors on these signal pins.
WP
OUTPUT
WRITE PROTECT: Write protect reects the status of the Write Protect switch on the memory card. WP set to high
= write protected, providing internal hardware write lockout to the Flash array. If card does not include optional write
protect switch, this signal will be pulled low internally indicating write protect = “off”.
VPP1, VPP2
N.C.
PROGRAM/ERASE POWER SUPPLY: Not connected for 5V only card.
VCC
CARD POWER SUPPLY: 5.0V for all internal circuitry.
GND
GROUND: for all internal circuitry.
REG#
INPUT
ATTRIBUTE MEMORY SELECT: provides access to Flash memory card registers and Card Information Structure in
the Attribute Memory Plane.
RST
INPUT
RESET: Active high signal for placing card in Power-on default state. Reset can be used as a Power-Down signal for
the memory array.
WAIT#
OUTPUT
WAIT: This signal is pulled high internally for compatibility. No wait states are generated.
BVD1, BVD2
OUTPUT
BATTERY VOLTAGE DETECT: These signals are pulled high to maintain SRAM card compatibility.
VS1, VS2
OUTPUT
VOLTAGE SENSE: Noties the host socket of the card’s VCC requirements. VS1 and VS2 are open to indicate a 5V
card has been inserted.
RFU
RESERVED FOR FUTURE USE
N.C.
NO INTERNAL CONNECTION TO CARD: pin may be driven or left oating
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