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參數(shù)資料
| 型號： | 7P192FLF1201C25 |
| 英文描述： | VOLTAGE DETECTOR W/PUSH PULL ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to +125C, 5-SOT-23, T/R |
| 中文描述： | 周邊雜項 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 202K |
| 代理商： | 7P192FLF1201C25 |
November 2000 Rev. 3 - ECO #13392
11
PCMCIA Flash Memory Card
FLF10 Series
PC Card Products
SYM
Parameter
Notes
Min
Typ
(1)
Max
Units Test Conditions
tWHQV1
Word/Byte Program time
2,4
6.3
s
Effective time per Byte
(using Write Buffer)
tWHQV3
Byte Program Time (using
Byte program command)
180
s
Block Program Time (using
write to buffer command)
2
0.8
sec
Word Program Mode
tWHQV4
Block Erase Time
2
0.7
sec
tWHRH
Erase Suspend Latency
Time to Read
26
35
s
Notes:
1. Typical: Nominal voltages and T
A = 25C.
2. Excludes system overhead.
3. Valid for all speed options.
4. To maximize system performance RDY/BSY# signal should be polled.
VCC = 5V ± 5%, T
A = 0C to + 70C
SYMBOL
Parameter
Min
Max
Unit
tw(RST)
Reset pulse High time
35
s
P2
RST Low to reset during
Erase/Program/Lock-bit
100
ns
trec(RST)
Reset Low to output delay
500
ns
trec(WEL)
Reset Recovery to WE going Low
1
s
tWHRL
WE High to Rdy/Bsy going low
100
ns
tw(RST)
P2
RDY/BSY
RST
Valid Output
trec(RST)
trec(WEL)
WE#
Read Operation
Write Operation
tWHRL
tWHQV
tWHRH
Data Write and Erase Performance (1,3)
Waveforms for Reset Operation
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| 7P192FLF1202C20 | VOLTAGE DETECTOR W/PUSH PULL ACTIVE LOW OUTPUT & Oms TIMEOUT, -40C to +125C, 5-SOT-23, T/R |
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| 7P192FLF1400C25 | VOLTAGE DETECTOR W/PUSH PULL ACTIVE LOW OUTPUT & 2ms TIMEOUT, -40C to +125C, 5-SOT-23, T/R |
| 7P192FLF1401C20 | VOLTAGE DETECTOR W/PUSH PULL ACTIVE LOW OUTPUT & Oms TIMEOUT, -40C to +125C, 5-SOT-23, T/R |
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