參數(shù)資料
型號(hào)： 7P040FLA292I15
廠(chǎng)商： MICROSEMI CORP-PMG MICROELECTRONICS
元件分類(lèi)： PROM
英文描述： 20M X 16 FLASH 5V PROM CARD, 150 ns, XMA68
封裝： CARD-68
文件頁(yè)數(shù)： 11/14頁(yè)
文件大?。?/td> 184K
代理商： 7P040FLA292I15
PCMCIA Flash Memory Card
FLA Series
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
July 2007
Rev. 6
White Electronic Designs Corp. reserves the right to change products or specications without notice.
Operating Temperature TA (ambient)
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C
Storage Temperature
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C
Voltage on any pin relative to VSS
-0.5V to VCC+0.5V
VCC supply Voltage relative to VSS
-0.5V to +7.0V
Note:
(1) Stress greater than those listed under “Absolute Maximum ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation at these or any other conditions greater than those
indicated in the operational sections of this specication is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
Parameter
Density(Mbytes)
Notes
Typ(3)
Max
Units
Test Conditions
ICCR
VCC Read Current
All
35
mA
VCC = VCCmax
tcycle = 150ns,CMOS levels
ICCW
VCC Program Current
All
28F008S5
28F016S5
75
mA
ICCW
VCC Program Current
All
28F008SA
Vpp=12V
30
mA
IPPW
VPP Program Current
All
30
mA
ICCE
VCC Erase Current
All
100
mA
ICCS
(CMOS)
VCC Standby Current
2MB
2
28F008SA
110
230
A
VCC = VCCmax
Control Signals = VCC
Reset = VSS, CMOS levels
20MB
900
2MB
2
600
20MB
28F008S5
420
4MB
2
60
40MB
28F016S5
380
DC CHARACTERISTICS (1)
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
Notes:
1. All currents are RMS values unless otherwise specied. ICCR, ICCW and ICCE are based on Byte wide operations. For 16 bit operation values are double.
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.
3. Typical: VCC = 5V, T = +25C.
Symbol
Parameter
Notes
Min
Max
Units
Test Conditions
ILI
Input Leakage Current
1
±20
A
VCC = VCCMAX
VIN =VCC or VSS
ILO
Output Leakage Current
1
±20
A
VCC = VCCMAX
VOUT =VCC or VSS
VIL
Input Low Voltage
1
0
0.8
V
VIH
Input High Voltage
1
0.7VCC
VCC+0.5
V
VOL
Output Low Voltage
1
0.4
V
IOL = 3.2mA
VOH
Output High Voltage
1
VCC-0.4
VCC
VIOH = -2.0mA
VLKO
VCC Erase/Program Lock Voltage
1
2.0
V
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1, CE2, OE, REG and WE will be < 500 A when VIN = GND due to internal pull-up resistors. Leakage currents on RST will be <150A when
VIN=VCC due to internal pull-down resistor.
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