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    參數(shù)資料
    型號: 7P016FLV2300C15
    英文描述: MCU CMOS 44 LD 40MHZ 4K BYTE FLASH, -40C to +85C, 44-QFN, T/R
    中文描述: EEPROM的
    文件頁數(shù): 11/15頁
    文件大?。?/td> 140K
    代理商: 7P016FLV2300C15
    August 2000 Rev. 4 - ECO #13125
    5
    PCMCIA Flash Memory Card
    FLA Series
    PC Card Products
    Absolute Maximum Ratings (1)
    Operating Temperature TA (ambient)
    Commercial
    0°C to +60 °C
    Industrial
    -40°C to +85 °C
    Storage Temperature
    Commercial
    -30°C to +80 °C
    Industrial
    -40°C to +85 °C
    Voltage on any pin relative to VSS
    -0.5V to VCC+0.5V
    VCC supply Voltage relative to VSS
    -0.5V to +7.0V
    Note:
    (1) Stress greater than those listed under
    “Absolute Maximum ratings” may cause
    permanent damage to the device. This is a
    stress rating only and functional operation at
    these or any other conditions greater than
    those indicated in the operational sections of
    this specification is not implied. Exposure to
    absolute maximum rating conditions for
    extended periods may affect reliability.
    Symbol Parameter
    Density
    (Mbytes)
    Notes
    Typ
    (3)
    Max
    Units Test Conditions
    ICCR
    VCC Read Current
    All
    35
    mA
    VCC = VCCmax
    tcycle = 150ns,CMOS levels
    ICCW
    VCC Program Current
    All
    28F008S5
    28F016S5
    75
    mA
    ICCW
    VCC Program Current
    All
    30
    mA
    IPPW
    VPP Program Current
    All
    28F008SA
    Vpp=12V
    30
    mA
    ICCE
    VCC Erase Current
    All
    100
    mA
    2MB
    110
    230
    20MB
    2
    28F008SA
    900
    2MB
    60
    20MB
    2
    28F008S5
    420
    4MB
    60
    ICCS
    (CMOS)
    VCC Standby Current
    40MB
    2
    28F016S5
    380
    A
    VCC = VCCmax
    Control Signals = VCC
    Reset = VSS, CMOS levels
    Notes:
    1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Byte wide operations.
    For 16 bit operation values are double.
    2. Control Signals: CE
    1#, CE2#, OE#, WE#, REG#.
    3. Typical: VCC = 5V, T = +25C.
    CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
    DC Characteristics (1)
    Symbol
    Parameter
    Notes
    Min
    Max
    Units
    Test Conditions
    ILI
    Input Leakage Current
    1
    ±20
    A
    VCC = VCCMAX
    Vin =VCC or VSS
    ILO
    Output Leakage Current
    1
    ±20
    A
    VCC = VCCMAX
    Vout =VCC or VSS
    VIL
    Input Low Voltage
    1
    0
    0.8
    V
    VIH
    Input High Voltage
    1
    0.7VCC
    VCC+0.5
    V
    VOL
    Output Low Voltage
    1
    0.4
    V
    IOL = 3.2mA
    VOH
    Output High Voltage
    1
    VCC-0.4
    VCC
    V
    IOH = -2.0mA
    VLKO
    VCC Erase/Program
    Lock Voltage
    12.0
    V
    Notes:
    1. Values are the same for byte and word wide modes for all card densities.
    2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 A when VIN = GND due to
    internal pull-up resistors. Leakage currents on RST will be <150A when VIN=VCC due to internal pull-down resistor.
    相關(guān)PDF資料
    PDF描述
    7P016FLV2300I15 28/40/44-Pin High-Performance, Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology, -40C to +85C, 44-QFN, TUBE
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