- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄294396 > 7P016FLB2601C15 (MICROSEMI CORP-PMG MICROELECTRONICS) 8M X 16 FLASH 5V PROM CARD, 150 ns, XMA68 PDF資料下載
參數(shù)資料
| 型號： | 7P016FLB2601C15 |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 8M X 16 FLASH 5V PROM CARD, 150 ns, XMA68 |
| 封裝： | CARD-68 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 118K |
| 代理商： | 7P016FLB2601C15 |
August 2000 Rev. 3 - ECO #13126
5
PCMCIA Flash Memory Card
FLB Series
PC Card Products
Absolute Maximum Ratings (1)
Operating Temperature TA (ambient)
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C **
Storage Temperature
Commercial
-30°C to +80 °C
Industrial
-40°C to +85 °C **
Voltage on any pin relative to VSS
-0.5V to VCC+0.5V (1)
VCC supply Voltage relative to VSS
-0.5V to +7.0V
Notes:
(1) During transitions, inputs may undershoot
to -2.0V or overshoot to V
CC +2.0V for periods
less than 20ns.
(2) Stress greater than those listed under
“Absolute Maximum ratings” may cause
permanent damage to the device. This is a
stress rating only and functional operation at
these or any other conditions greater than
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for
extended periods may affect reliability.
Sym
Parameter
Density
(Mbytes)
Notes
Typ
(4)
Max
Units
Test Conditions
ICCR
VCC Read Current
All
75
mA
VCC = VCCmax
tcycle = 150ns,CMOS levels
ICCW
VCC Program Current
All
150
mA
ICCE
VCC Erase Current
All
150
mA
ICCS
(CMOS)
VCC Standby Current
2MB
(4MB)
2,3
80
230
A
VCC = VCCmax
Control Signals = VCC
Reset = VSS, CMOS levels
Notes:
1. All currents are RMS values unless otherwise specified. ICCR, ICCW and ICCE are based on Word wide operations.
2. Control Signals: CE
1#, CE2#, OE#, WE#, REG#.
3. ICCD and ICCS are specified for lowest density card for each component type (2MB for 8Mb components and
4MB for 16Mb components) This represents a single pair of devices. For higher densities multiply the number of device
pairs by the specified current in the table. For example a 40MB card will use 10 device pairs of 16Mb components.
The maximum ICCD will be 10 x 40A = 400A. The maximum ICCS will be 10 x 230A = 2.3mA.
4. Typical: V
CC = 5V, T = +25°C.
CMOS Test Conditions: V
CC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
DC Characteristics (1)
Symbol
Parameter
Notes
Min
Max
Units
Test Conditions
ILI
Input Leakage Current
1
±20
A
VCC = VCCMAX
Vin =VCC or VSS
ILO
Output Leakage Current
1
±20
A
VCC = VCCMAX
Vout =VCC or VSS
VIL
Input Low Voltage
1
0
0.8
V
VIH
Input High Voltage
1
0.7VCC
VCC+0.5
V
VOL
Output Low Voltage
1
0.4
V
IOL = 3.2mA
VOH
Output High Voltage
1
VCC-0.4
VCC
VIOH = -2.0mA
VLKO
VCC Erase/Program
Lock Voltage
12.0
V
** Advanced information.
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 A when VIN = GND due to
internal pull-up resistors. Leakage currents on RST will be <150A when VIN=V
CC due to internal pull-down resistor.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 7P0160602C15 | EEPROM |
| 7P0080500C15 | EEPROM |
| 7P0080500I15 | EEPROM |
| 7P0080501C15 | EEPROM |
| 7P0080501I15 | EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 7P-10.000MBP-T | 功能描述:OSC TCXO 10.000MHZ CMOS SMD 制造商:txc corporation 系列:* 零件狀態(tài):在售 標(biāo)準(zhǔn)包裝:1,000 |
| 7P102V330A052 | 制造商:CDE 制造商全稱:Cornell Dubilier Electronics 功能描述:Type 7P 55 ∑C Photoflash, High-Energy, Long Life, Aluminum |
| 7P102V330N042 | 制造商:CDE 制造商全稱:Cornell Dubilier Electronics 功能描述:Type 7P 55 ∑C Photoflash, High-Energy, Long Life, Aluminum |
| 7P102V360A052 | 功能描述:鋁質(zhì)電解電容器-管理單元 1000uF 360V PHOTO RoHS:否 制造商:Nichicon 電容:470 uF 容差:20 % 電壓額定值:450 V ESR: 工作溫度范圍:- 25 C to + 105 C 系列:AR 直徑:35 mm 長度:45 mm 引線間隔:10 mm 產(chǎn)品:General Purpose Electrolytic Capacitors |
| 7P122V330A052 | 制造商:CDE 制造商全稱:Cornell Dubilier Electronics 功能描述:Type 7P 55 ∑C Photoflash, High-Energy, Long Life, Aluminum |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。