參數(shù)資料
型號： 7P016ATA2003C25
英文描述： Flash Memory Card(16M位閃速存儲器卡)
中文描述： 閃存卡（1,600位閃速存儲器卡）
文件頁數(shù)： 47/66頁
文件大?。?/td> 585K
代理商： 7P016ATA2003C25
7PxxxATA20xxC25
June 2000 Rev. 5 – ECO #12935
47
White Electronic Designs Corporation
(508) 366-5151
DC Characteristics-3
(Ta = 0 to +60
°
C, V
CC
= 5.0 V ± 10%)
(Industrial Ta = -40 to +85
°
C, V
CC
= 5.0 V ± 10%)
8MB/16MB
32MB/48MB
96MB
MB/150MB
64MB/80MB
112MB/128
Parameter
Symbol
Typ Max
Typ Max
Typ Max
Unit
Test conditions
Sleep/standby
current
I
SP1
0.5
1.0
0.7
1.5
1.0
2.0
mA
CMOS level (control signal =
V
CC
– 0.2 V in Memory Card
Mode and I/O Card Mode)
Sector read
current
I
CCR
(DC)
40
75
40
75
40
75
mA
I
CCR
(Peak)
80
120
80
120
80
120
CMOS level (control signal =
V
CC
– 0.2 V) during sector read
transfer
Sector write
current
I
CCW
(DC)
45
75
45
75
45
75
mA
I
CCW
(Peak) 80
120
80
120
80
120
CMOS level (control signal =
V
CC
– 0.2 V) during sector write
transfer
DC Characteristics-4
(Ta = 0 to +60
°
C, V
CC
= 3.3 V ± 5%)
(Ta = -40 to +85
°
C, V
CC
= 3.3 V ± 5%)
8MB/16MB
32MB/48MB
64MB/80MB
96MB
112MB/128
MB/160MB
Parameter
Symbol
Typ Max
Typ Max
Typ Max
Unit
Test conditions
Sleep/standby
current
I
SP1
0.3
0.6
0.4
0.8
0.5
1.0
mA
CMOS level (control signal =
V
CC
– 0.2 V in Memory Card
Mode and I/O Card Mode)
Sector read
current
I
CCR
(DC)
25
50
25
50
25
50
mA
I
CCR
(Peak)
50
80
50
80
50
80
CMOS level (control signal =
V
CC
– 0.2 V) during sector read
transfer
Sector write
current
I
CCW
(DC)
25
50
25
50
25
50
mA
I
CCW
(Peak) 50
80
50
80
50
80
CMOS level (control signal =
V
CC
– 0.2 V) during sector write
transfer
相關(guān)PDF資料
PDF描述
7P032ATA2003C25 Flash Memory Card(32M位閃速存儲器卡)
7P048ATA2003C25 Flash Memory Card(48M位閃速存儲器卡)
7P080ATA2003C25 Flash Memory Card(80M位閃速存儲器卡)
7P096ATA2003C25 Flash Memory Card(96M位閃速存儲器卡)
7P112ATA2003C25 Flash Memory Card(112M位閃速存儲器卡)
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參數(shù)描述
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