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參數(shù)資料
| 型號： | 7P008FLB2501C15 |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 4M X 16 FLASH 5V PROM CARD, 150 ns, XMA68 |
| 封裝： | CARD-68 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 118K |
| 代理商： | 7P008FLB2501C15 |
August 2000 Rev. 3 - ECO #13126
4
PCMCIA Flash Memory Card
FLB Series
PC Card Products
Symbol
Type
Name and Function
A0 - A25
INPUT
ADDRESS INPUTS: A0 through A25 enable direct addressing of
up to 64MB of memory on the card. Signal A0 is not used in word
access mode. A25 is the most significant bit
DQ0 - DQ15
INPUT/OUTPUT
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the
bi-directional databus. DQ15 is the MSB.
CE1#, CE2#
INPUT
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2#
enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows
8-bit hosts to access all data on DQ0 - DQ7.
OE#
INPUT
OUTPUT ENABLE: Active low signal gating read data from the
memory card.
WE#
INPUT
WRITE ENABLE: Active low signal gating write data to the
memory card.
RDY/BSY#
OUTPUT
READY/BUSY OUTPUT: Indicates status of internally timed erase
or program algorithms. A high output indicates that the card is ready
to accept accesses. A low output indicates that one or more devices
in the memory card are busy with internally timed erase or write
activities.
CD1#, CD2#
OUTPUT
CARD DETECT 1 and 2: Provide card insertion detection. These
signals are connected to ground internally on the memory card. The
host socket interface circuitry shall supply 10K-ohm or larger pull-up
resistors on these signal pins.
WP
OUTPUT
WRITE PROTECT: Write protect reflects the status of the Write
Protect switch on the memory card. WP set to high = write protected,
providing internal hardware write lockout to the Flash array.
If card does not include optional write protect switch, this signal will
be pulled low internally indicating write protect = "off".
VPP1, VPP2
N.C.
PROGRAM/ERASE POWER SUPPLY: Not connected for 5V
only card.
VCC
CARD POWER SUPPLY: 5.0V for all internal circuitry.
GND
GROUND: for all internal circuitry.
REG#
INPUT
ATTRIBUTE MEMORY SELECT : provides access to Flash
memory card registers and Card Information Structure in the
Attribute Memory Plane.
RST
INPUT
RESET: Active high signal for placing card in Power-on default
state. Reset can be used as a Power-Down signal for the memory
array.
WAIT#
OUTPUT
WAIT: This signal is pulled high internally for compatibility. No
wait states are generated.
BVD1, BVD2
OUTPUT
BATTERY VOLTAGE DETECT: These signals are pulled high to
maintain SRAM card compatibility.
VS1, VS2
OUTPUT
VOLTAGE SENSE: Notifies the host socket of the card's VCC
requirements. VS1 and VS2 are open to indicate a 5V card has been
inserted.
RFU
RESERVED FOR FUTURE USE
N.C.
NO INTERNAL CONNECTION TO CARD: pin may be driven
or left floating
Card Signal Description
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